Objective lens with high transmittance in the near-infrared 1000-2000nm. Silicon thickness cover glass available for 20X and 50X.
Enables high-contrast imaging inside semiconductor devices: silicon wafers, chip MEMS etc.

Ideal for semiconductor device failure analysis as it detects weak emissions due to leakage currents. Infrared transmission from the backside of the wafer enables good observation highly integrated and multi-layered wiring semiconductors.