PEIR 2000 HRS
Near IR 2000nm Objective Lens
Objective lens with high transmittance in the near-infrared 1000-2000nm.
Enables high-contrast imaging inside semiconductor devices: silicon wafers, chip MEMS etc.
Ideal for semiconductor device failure analysis as it detects weak emissions due to leakage- currents. Infrared transmission from the backside of the wafer enables good observation of highly integrated and multi-layered wiring semiconductors.
What’s New
| Specification | PE IR 10X 2000 HRS | PE IR 20X 2000 HRS | PE IR 50X 2000 HRS |
|---|---|---|---|
| Magnification | 10X | 20X | 50X |
| Working Distance | 20mm | 10mm | 10mm |
| Focal Length (f) | 20mm | 10mm | 4mm |
| NA | 0.33 | 0.6 | 0.7 |
| Resolution | 2.9µm | 1.6µm | 1.4µm |
| Focal Depth (±D.F) | 7.1µm | 2.1µm | 1.5µm |
| Transmission 1300nm | 80% or higher | 80% or higher | 80% or higher |
| Transmission 2000nm | 75% or higher | 75% or higher | 80% or higher |
| Silicon Thickness Corrected Glass | - | CG-PE20X2000-SiO₂ | CG-PE20X2000-SiO₂ |
| Weight | 490g | 610g | 560g |
Note: Resolution and Focal Depth calculated using the wavelength of λ = 1550nm
Resolution = 0.61 × 1.55(λ) / NA
Focal Depth ±D(µm) = 1.55(λ) / [2(NA)²]
